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FJC1386
FJC1386
Low Saturation Transistor Medium Power Amplifier
* Complement to FJC2098 * High Collector Current * Low Collector-Emitter Saturation Voltage
1
SOT-89
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation(TC=25C) Junction Temperature Storage Temperature Value -30 -20 -6 -5 0.5 150 - 55 ~ 150 Units V V V A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-20V, VB=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A IC=-4, IB=-0.1A IC=-4, IB=-0.1A 80 Min. -30 -20 -6 -0.5 -0.5 390 -1.0 -1.5 V V Typ. Max. Units V V V A A
Thermal Characteristics TC=25C unless otherwise noted
Symbol RjA Parameter Thermal Resistance, Junction to Ambient Max 250 Units C/W
hFE Classification
Classification hFE P 80 ~ 180
Marking
Q 120 ~ 270
R 180 ~ 390
FAP
hFE grade
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FJC1386
Typical Characteristics
-1400
1000
IB = -7mA
VCE = - 2V
Ta = 125 C
o
IC [mA], COLLECTOR CURRENT
-1200
hFE, DC CURRENT GAIN
IB = -6mA
-1000
Ta = 25 C
o
IB = -5mA
-800
IB = -4mA
-600
100
Ta = - 40 C
o
IB = -3mA
-400
IB = -2mA
-200
IB = -1mA
0 -2 -4 -6 -8 -10 -12 -14 -16
10 -10m -100m -1 -10
0
V CE[V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-10
VCE(sat) [V], SATURATION VOLTAGE
-1
Ta = 125 C
-100m
o
VBE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
IC = 10 IB
-1
Ta = - 40 C
o
Ta = 25 C Ta = - 40 C
-10m
o
o
Ta = 125 C
o
Ta = 25 C
o
-1m -1m
-10m
-100m
-1
-10
-0.1 -1m
-10m
-100m
-1
-10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
-1.8 -1.6
0.7
VCE = - 2V
PC [W], COLLECTOR POWER DISSIPATION
0.6
IC [A], COLLECTOR CURRENT
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4
0.5
0.4
0.3
0.2
125 C
-0.2 -0.0 -0.0
o
25 C
o
- 40 C
o
0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
0.0 0 25 50
o
75
100
125
150
175
VBE [V], BASE-EMITTER VOLTAGE
Ta [ C], AMIBIENT TEMPERATURE
Figure 5. Base-Emitter On Voltage
Figure 6. Power Derating
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FJC1386
Package Dimensions
SOT-89
4.50 0.20 1.65 0.10 C0.2
(0.50)
1.50 0.20 (0.40)
0.20
2.50
0.50 0.10 1.50 TYP 1.50 TYP
0.40 0.10 0.40 +0.10 -0.05
(1.10)
4.10
0.20
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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